Gate-All-Around FETs: Nanowire and Nanosheet Structure
Figure 1. Schematic diagrams of FinFETs and GAAFETs. 2-D cross-sections of nanosheet and nanowire channels were also specified to the right. Table 1 shows the geometrical parameters and values of 3-nm-node FinFETs and GAAFETs. Contacted poly pitch (CPP) and fin pitch (FP) are 42 and 21 nm, following 3-nm technology node [].There are two …