The lowest Schottky barriers determined were Ni (0.66 eV) and Au (0.44 eV). ... Selenide back contact solar cell results from the literature are summarized (along with sulfide back contacts) in Table 5. There are no reports of MoSe …
[25] Consequently, it is inferred that back interface passivation induces two contradictory electrical effects for ultrathin CIGSe solar cells with a Schottky back contact. It brings the ...
Ohmic contacts connect a photovoltaic absorber from the two sides of the charge-selective contact of a solar cell with metal leads connecting to external load. This chapter is devoted to the concept of ideal ohmic contacts and to realization principles of ohmic contacts at metal–semiconductor and semiconductor–semiconductor interfaces ...
DOI: 10.1021/nl505011f Corpus ID: 7468389; Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells. @article{Song2015RoleOI, title={Role of interfacial oxide in high-efficiency graphene-silicon Schottky barrier solar cells.}, author={Yi Song and Xinming Li and Charles Mackin and Xu Zhang and Wenjing Fang and Tom{''a}s Palacios …
Simulated J–V plots of a Schottky-junction monolayer MoS 2-based solar cell showing the effect of contact metal work functions for (a) the electron-selective contact (Φ e) and (b) the hole-selective contact (Φ h). For …
a metal–semiconductor Schottky contact are discussed in Section 10.8. In Section 10.9, applications of Schottky barrier diodes for photodetectors, microwave mix-ers, clamped transistors, metal-gate field-effect transistors (MESFETs), and solar cells are discussed. Finally, some conventional and novel approaches for forming
In this article, the concept of floating gate Schottky junction (FGSJ) solar cell with improved photovoltaic properties, compared to those of the conventional Schottky junction solar cell, is ...
However, there are major challenges in the development of high-quality p-doped and indium-rich InGaN layers to fabricate a pn or pin solar cell. This study focuses on the …
We theoretically study the efficiency limits and performance characteristics of few-layer graphene–semiconductor solar cells (FGSCs) based on a Schottky contact device …
The obtained ZnSnN 2 and silver deposited with radio-frequency sputtering can form Schottky contact which shows photovoltaic effects. The voltage- and frequency-dependent capacitance of the Schottky diodes is further studied. ... (Insets: the single-diode circuit model and the cross sectional structure of the Schottky solar cells);
GaInN/GaN Schottky Barrier Solar Cells Kevin T. Chern Abstract GaInN has the potential to revolutionize the solar cell industry, enabling higher efficiency solar ... Equilibrium energy band diagram for a tandem GaInP-GaAs Schottky solar cell. The metal contact (5.2 eV metal at 1 μm from the bottom of the structure) serves as both an ohmic ...
The Schottky cell was the first colloidal quantum dot solar structure to achieve efficiencies of 1% 7,8,9. In this device, a transparent conducting oxide with a relatively large work function ...
Solar-cells based on Schottky junctions between metals and semiconductors (without or with an intermediate insulator) are among the main possibilities towards economical …
DOI: 10.1002/adma.200904383 Corpus ID: 16478297; Graphene‐On‐Silicon Schottky Junction Solar Cells @article{Li2010GrapheneOnSiliconSJ, title={Graphene‐On‐Silicon Schottky Junction Solar Cells}, author={Xinming Li and Hongwei Zhu and Kunlin Wang and Anyuan Cao and Jinquan Wei and Chunyan Li and Yi Jia and Zhen Li and Xiao Li and De-hai …
Herein, we developed a near-invisible solar cell through a precise control of the contact barrier between an indium tin oxide (ITO) electrode and a monolayer tungsten disulfide …
Compared with the p-n junction solar cell, the Schottky diode solar cell has a relatively small V OC, which is limited by the SBH. [12-15] It is well known that the Schottky contacts with thinner WS 2 flakes have larger SBH, owing …
Solar cell contacts are ideally ohmic and with little contact resistance. The metal contact is often wider and more conductive than the thickness of the semiconductor layer, which gives rise to the concept of a transfer length. ... Contacts can be either ohmic or Schottky. Ohmic contacts have linear or quasi-linear current-voltage ...
Prior to preparing Schottky-junction Si solar cells using these a-C films, as shown in Fig. 2 a, we fabricated metal/carbon/metal devices on SiO 2 (300 nm)/Si substrate with silver (Ag) as contact electrodes to study the effect of annealing temperature on their electrical properties. Fig. 2 b shows current-voltage (I–V) curves of C N-as, C N-750, C N-800, C N-850, …
The photovoltaic behaviour of metal/n-InGaN Schottky junction solar cells with low- and high-level injection conditions are explored by using voltage model. Four metals Ni–Au, Ni, Au and Pt are used as Schottky contact with n-InGaN and Schottky junction solar cell studied for open-circuit voltage (V oc) and short circuit current density (J sc) with a variation of Indium …
We have investigated the performance of Schottky junction solar cells based on silicon and graphene with 1–6 layers. The open-circuit voltage of solar cells shows an increase when increasing the number of graphene layers. However, the power conversion efficiency and short-circuit current density increase monotonically when the number of graphene layers is …
To the best of our knowledge, this is the best efficiency reported so far for a Schottky-type wire-based solar cell; a simple extrapolation of the surface area suggests that an efficiency of more than 10% can be reached, which is comparable to that of single-junction hydrogenated amorphous Si cells. We also compare the Schottky-type cell with a ...
A bipolar equivalent circuit model is developed for silicon hetero-junction silicon solar cells (SHJ) with a Schottky contact between the p-type amorphous silicon and the transparent conducting oxide (TCO). The Schottky barrier is treated as a bipolar collector junction through which holes are transported by thermionic emission, while electrons reaching the …
The solar cell consists of a 1.2 µm n-type InGaN layer (n-doping concentration of 6.5 × 10 16 cm −3), deposited on a sapphire substrate (Al 2 O 3).The indium fraction x in the In x GaN 1−x active layer is varied over the range [0.1–0.8]. An ultra-thin metal Schottky contact (5 nm) is used to facilitate the transition of photons into the InGaN layer.
Schottky diodes and solar cells are statistically created in the contact area between two macroscopic films of single-walled carbon nanotubes (SWNTs) at the junction of semiconducting and quasi-metallic bundles consisting of several high quality tubes. The n-doping of one of the films allows for photovoltaic action, owing to an increase in the built-in potential at …
The obtained ZnSnN 2 and silver deposited with radio-frequency sputtering can form Schottky contact which shows photovoltaic effects. The voltage- and frequency …
Schottky barrier solar cells, analogous to conventional metal/semicon-ductor Schottky barrier solar cells. To address the challenges of building such devices, solution-processing techniques are extensively investigated for depositing perovskite films directly onto graphene in order to obtain an intimate contact between the graphene and perovskite.
An overview of ohmic contacts on solar cells is presented. The fundamentals of metal-semiconductor contacts are reviewed, including the Schottky approach, Fermi level pinning by surface...
Another reason for the poor performance of semi-transparent ultrathin CIGSe solar cells is the inherent Schottky back contact resulting from a mismatch of work functions between TCO and CIGSe, which deteriorates the electrical properties in terms of blocking the hole transport [6, 8, 11].
Recently, the Graphene/GaAs and Graphene/AlGaAs/GaAs Schottky junction solar cells have been considered. Contact between the metal and the semiconductor can lead to Ohmic and rectifying junctions (called Schottky). In the Schottky junction, an electric field made in the semiconductor depletion region converts it into a photovoltaic device.
An overview of ohmic contacts on solar cells is presented. The fundamentals of metal-semiconductor contacts are reviewed, including the Schottky approach, Fermi level pinning by surface states, and the mechanisms of thermionic emission, thermionic/field emission, and tunneling for current transport. The concept of contact resistance is developed and contact …
In this article, we investigate the dark current in a non-ohmic cathode contact P3HT:PCBM BHJ solar cell by adopting the classical Schottky diffusion theory 7 on one hand and by using the Analysis of Microelectronic and Photonic Structures-one-dimensional (AMPS-1D) simulator 8 on the other. We demonstrate that the dark J D /V characteristics obey the …
DOI: 10.1016/j.mseb.2023.116458 Corpus ID: 257895435; An investigation of defects, band-offset, and Schottky barrier height for boosting the performance of formamidinium mixed cation mixed halide based perovskite solar cell: Theoretical approach
Considering this insight, platinum emerges as the most suitable metal contact for the development of InGaN-based Schottky solar cells thanks to its high workfunction, thus making it possible to create a barrier theoretically allowing the cell to achieve a higher efficiency than those using other noble metals such as gold or palladium [13].
Schottky barrier solar cells are a promising alternative to conventionally fabricated solar cells. Diusion process used in conventional fabrication is high temperature and sophisticated process with high thermal budget. With the motive to overcome this problem, Schottky barrier solar cells were fabricated with low temperature and less cost
Schottky barrier solar cells are a promising alternative to conventionally fabricated solar cells. Diffusion process used in conventional fabrication is high temperature and sophisticated process ...
Graphene on silicon (G/Si) Schottky junction solar cell was fabricated for first time in 2010 when Li et al. transferred a CVD graphene on the top of 1 cm 2 of n-type Si substrate (with phosphor doping of 10 15 cm −3), coated with 300 nm of a patterned SiO 2.The cell showed 420–480 mV, 4–6.5 mA/cm 2, 45–56%, and 1–1.7% of open-circuit voltage (V oc), short-circuit …
The application of Mott−Schottky analysis to capacitance−voltage measurements of polymer:fullerene solar cells is a frequently used method to determine doping densities and built-in voltages ...
In the current work, we reveal a mechanism of two-dimensional (2D) semiconductors (2DSCs) layer-number-assisted metal-semiconductor (SC) interface …
The Schottky junction solar cells are the simplest and single-layer structure of solar cells, offering low-cost and easy fabrication. In this study, we have simulated and analyzed the Schottky ...
Graphene has been employed in the preparation process of solar cells due to its unique properties. It has been combined with silicon (Si) substrates for preparing the top window structure of a graphene/n-Si Schottky junction solar cell.However, the usage of the mono-graphene layer results in a low fill factor of prepared samples.
In this paper, A CdTe/CdS solar cell with contact back type Schottky is designed and simulated. The proposed structure exhibited conversion efficiency equal to 16.49% for 350 K under work function of 5.6 eV which allows us …
Accordingly, we propose to replace the p-layer by a Schottky contact (Schottky solar cell) to solve these critical problems. This innovation is widely used for III-Nitride based power devices and photodetectors [14].Whereas it is exceptionally new for the based-InGaN photovoltaic technology.
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